GCMS040B120S1-E1
Part NoGCMS040B120S1-E1
ManufacturerSemiQ
DescriptionSIC 1200V 40M MOSFET & 15A SBD S
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C57A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)52mOhm @ 40A, 20V
RdsOn(Max)@Id4V @ 10mA
Vgs124 nC @ 20 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)3110 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature242W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSOT-227
SupplierDevicePackageSOT-227-4, miniBLOC
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
17863
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 39.589 | |
| 10 | 38.7972 | |
| 100 | 37.6095 | |
| 1000 | 36.4219 | |
| 10000 | 34.8383 |
Associated Product
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