TSM4NB60CH C5G
Part NoTSM4NB60CH C5G
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CH 600V 4A TO251
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.5Ohm @ 2A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs14.5 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)500 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature50W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-251 (IPAK)
GateCharge(Qg)(Max)@VgsTO-251-3 Short Leads, IPak, TO-251AA
Grade
Qualification
In Stock:
18230
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0403 | |
| 10 | 1.0195 | |
| 100 | 0.9883 | |
| 1000 | 0.9571 | |
| 10000 | 0.9155 |
Associated Product
