IRF510S
Part NoIRF510S
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 5.6A D2PAK
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C5.6A (Tc)
DriveVoltage(MaxRdsOn540mOhm @ 3.4A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id8.3 nC @ 10 V
Vgs180 pF @ 25 V
Vgs(th)(Max)@Id-
Vgs(Max)Surface Mount
InputCapacitance(Ciss)(Max)@VdsTO-263 (D2PAK)
FETFeatureTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PowerDissipation(Max)10V
OperatingTemperature±20V
MountingType3.7W (Ta), 43W (Tc)
SupplierDevicePackage-55°C ~ 175°C (TJ)
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
16733
Pricing
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Associated Product
