SI5411EDU-T1-GE3
RoHS

SI5411EDU-T1-GE3

Part NoSI5411EDU-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 12V 25A PPAK
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ECAD Module SI5411EDU-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)12 V
Current-ContinuousDrain(Id)@25°C25A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)8.2mOhm @ 6A, 4.5V
RdsOn(Max)@Id900mV @ 250µA
Vgs105 nC @ 8 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds3.1W (Ta), 31W (Tc)
FETFeature-50°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® ChipFet Single
MountingTypePowerPAK® ChipFET™ Single
SupplierDevicePackage4100 pF @ 6 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 8302
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
SQJ481EP-T1_BE3
SQJ481EP-T1_BE3
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