SI5480DU-T1-GE3
Part NoSI5480DU-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 12A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)16mOhm @ 7.2A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs34 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds3.1W (Ta), 31W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® ChipFET™ Single
MountingTypePowerPAK® ChipFET™ Single
SupplierDevicePackage1230 pF @ 15 V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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6188
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Associated Product
