SIR670DP-T1-GE3
Part NoSIR670DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 60V 60A PPAK SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C60A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)4.8mOhm @ 20A, 10V
RdsOn(Max)@Id2.8V @ 250µA
Vgs63 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2815 pF @ 30 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature5W (Ta), 56.8W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® SO-8
GateCharge(Qg)(Max)@VgsPowerPAK® SO-8
Grade
Qualification
In Stock:
14793
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5568 | |
| 10 | 0.5457 | |
| 100 | 0.529 | |
| 1000 | 0.5123 | |
| 10000 | 0.49 |
Associated Product
