SIR800DP-T1-RE3
Part NoSIR800DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 20V 50A PPAK SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET® Gen III
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C50A (Tc)
DriveVoltage(MaxRdsOn2.5V, 10V
MinRdsOn)2.3mOhm @ 15A, 10V
RdsOn(Max)@Id1.5V @ 250µA
Vgs133 nC @ 10 V
Vgs(th)(Max)@Id±12V
Vgs(Max)5125 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature69W (Tc)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® SO-8
MountingTypePowerPAK® SO-8
SupplierDevicePackage-55°C ~ 150°C (TJ)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3060
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6365 | |
| 10 | 0.6238 | |
| 100 | 0.6047 | |
| 1000 | 0.5856 | |
| 10000 | 0.5601 |
Associated Product
