SQS482ENW-T1_GE3
RoHS

SQS482ENW-T1_GE3

Part NoSQS482ENW-T1_GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 16A PPAK1212-8W
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ECAD Module SQS482ENW-T1_GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C16A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)8.5mOhm @ 16.4A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs39 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1865 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature62W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8W
SupplierDevicePackagePowerPAK® 1212-8W
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock: 4735
Pricing
QTY UNIT PRICE EXT PRICE
1 0.7298
10 0.7152
100 0.6933
1000 0.6714
10000 0.6422
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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