FCP190N65F
Part NoFCP190N65F
Manufactureronsemi
DescriptionMOSFET N-CH 650V 20.6A TO220-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesFRFET®, SuperFET® II
ProductStatusNot For New Designs
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C20.6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)190mOhm @ 10A, 10V
RdsOn(Max)@Id5V @ 2mA
Vgs78 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3225 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature208W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
23909
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.0228 | |
| 10 | 4.9223 | |
| 100 | 4.7717 | |
| 1000 | 4.621 | |
| 10000 | 4.4201 |
Associated Product
