FCPF190N65FL1
Part NoFCPF190N65FL1
Manufactureronsemi
DescriptionMOSFET N-CH 650V 20.6A TO220F
Datasheet
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Specification
PackageTube
SeriesSuperFET® II
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C20.6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)190mOhm @ 10A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs78 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3055 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature39W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220F-3
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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12354
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