NTD4970N-1G
RoHS

NTD4970N-1G

Part NoNTD4970N-1G
Manufactureronsemi
DescriptionMOSFET N-CH 30V 38A IPAK
Datasheet Download Now!
ECAD Module NTD4970N-1G
Get Quotation Now!
Specification
RoHSCompliant
Fall Time5.7 ns
Lead FreeLead Free
Rise Time27.6 ns
Rds On Max11 mΩ
Case/PackageTO-251
Number of Pins4
Lifecycle StatusObsolete (Last Updated: 2 years ago)
Input Capacitance774 pF
Power Dissipation2.55 W
Number of Elements1
Radiation HardeningNo
Element ConfigurationSingle
Max Power Dissipation1.38 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance21 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)11.6 A
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 years ago)
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock: 9624
Pricing
QTY UNIT PRICE EXT PRICE
1 0.28
10 0.2744
100 0.266
1000 0.2576
10000 0.2464
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
NTD12N10T4G
NTD12N10T4G
onsemi
MOSFET N-CH 100V 12A DPAK
IXTQ56N15T
IXTQ56N15T
IXYS
MOSFET N-CH 150V 56A TO3P
IRFBC20LPBF
IRFBC20LPBF
Vishay Siliconix
MOSFET N-CH 600V 2.2A TO262-3
MTP1306
MTP1306
onsemi
POWER FIELD-EFFECT TRANSISTOR
SIDR668ADP-T1-RE3
SIDR668ADP-T1-RE3
Vishay Siliconix
MOSFET N-CH 100V 23.3A/104A PPAK
RW1A030APT2CR
RW1A030APT2CR
ROHM
MOSFET P-CH 12V 3A 6WEMT